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AP601
Product Features
* 800 - 2400 MHz * +32.5 dBm P1dB * -51 dBc ACLR @ 1/4W PAVG * -55 dBc IMD3 @ 1/4W PEP * 17% Efficiency @ 1/4W PAVG * * * *
High Dynamic Range 1.8W 28V HBT Amplifier
Product Description
The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has 13.5 dB gain, while being able to achieve high performance for 800-2400 MHz applications with up to +32.5 dBm of compressed 1dB power.
Functional Diagram
ACLR1 (dBc)
The AP601 uses a high reliability, high voltage InGaP/GaAs HBT process technology. The device Internal Active Bias incorporates proprietary bias circuitry to compensate for Internal Temp Compensation variations in linearity and current draw over temperature. Capable of handling 7:1 VSWR @ The module does not require any negative bias voltage; an internal active bias allows the AP601 to operate directly off 28 Vcc, 2.14 GHz, 1W CW Pout a commonly used high voltage supply (typically +24 to +32V). An added feature allows the quiescent bias to be Lead-free/RoHS-compliant adjusted externally to meet specific system requirements. 5x6 mm power DFN package The AP601 is targeted for use as a pre-driver and driver stage amplifier in wireless infrastructure where high linearity and high efficiency is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G mobile infrastructure.
ACLR1 vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 C
-35
20 mA
-40 -45 -50 -55 -60 18
40 mA 50 mA
Applications
* Mobile Infrastructure HPA * WiBro HPA
20
22
24
26
Average Output Power (dBm)
Specifications
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 40 mA
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 40 mA
Parameter
Operational Bandwidth Test Frequency Output Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +24 dBm PEP PIN_VPD Current, Ipd Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
Units Min
MHz MHz dBm dB dB dB dBc dBc mA mA % dBm mA V V 800
Typ
2140 +24 13.5 12 8 -51 -55 1 52 17 +32.5 40 +5 +28
Max
2200
Parameter
Test Frequency Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +24 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
Units
MHz dBm dB dB dB dBc dBc mA % dBm mA V V 940 +24 15.8 13 7 -50 -51 52 17 +32.5
Typical
1960 +24 15 11 10 -49 -62 52 17 +32.7 40 +5 +28 2140 +24 13.5 12 8 -51 -55 52 17 +32.5
Absolute Maximum Rating
Parameter
Storage Temperature, Tstg Junction Temperature, TJ
For 106 hours MTTF
Notes: 1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR performance at +25 C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 40 mA to achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More information is given in the other parts of this datasheet. 2. The AP601 evaluation board has been tested for ruggedness to be capable of handling: 7:1 VSWR @ +28 Vcc, 2140 MHz, 1W CW Pout, 5:1 VSWR @ +30 Vcc, 2140 MHz, 1W CW Pout, 3:1 VSWR @ +32 Vcc, 2140 MHz, 1W CW Pout.
Rating
-55 to +125 C 192 C Input P6dB 80 V @ 0.1 mA 51 V @ 0.1 mA 80 mA 2.3 W
Ordering Information
Part No.
AP601-F AP601-PCB900 AP601-PCB1960 AP601-PCB2140
RF Input Power (CW tone), Pin Breakdown Voltage C-B, BVCBO Breakdown Voltage C-E, BVCEO Quiescent Bias Current, ICQ Power Dissipation, PDISS
Description
High Dynamic Range 28V 1.8W HBT Amplifier 869-960 MHz Evaluation board 1930-1990 MHz Evaluation board 2110-2170 MHz Evaluation board
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 1 of 10 May 2007 ver 1
AP601
40 35 30 25 Gain (dB) 20 15
High Dynamic Range 1.8W 28V HBT Amplifier
S-Parameters (VCC = +28 V, VPD = VBIAS = 5 V, ICQ = 40 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
1.0
1.0
Typical Device Data
S11
0.8
Gain / Maximum Stable Gain
DB(|S(2,1)|) DB(GMax())
0. 4
S22
6 0.
6 0.
Swp Max 3.00001GHz
2. 0
Swp Max 3.00001GHz
2. 0
0.8
0 3.
0 4.
10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
10 5
0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
-5 -10 0 0.5 1 1.5 Frequency (GHz) 2 2.5
.4 -0
.4 -0
-0 .6
-0 .6
-0.8
-0.8
.0 -2
.0 -2
Swp Min 3e-005GHz
Swp Min 3e-005GHz
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the marked red line. The impedance plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increments.
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
-9.60 -8.20 -5.47 -2.93 -2.02 -1.58 -1.69 -1.49 -1.52 -1.70 -2.01 -2.35 -2.78 -3.34 -4.04 -5.00 -5.86
-165.86 -156.90 -154.63 -164.90 -173.51 -179.10 177.02 173.06 168.28 162.02 153.47 142.58 130.51 119.29 111.03 109.46 118.67
22.23 21.64 20.66 18.00 15.57 13.78 12.16 11.02 10.09 9.48 9.14 8.93 8.73 8.50 8.34 8.17 8.03
169.20 160.86 144.37 121.17 107.46 98.50 89.73 82.27 75.95 69.46 61.67 52.54 42.07 30.77 17.30 1.87 -16.70
-1.0
-46.52 -41.16 -36.22 -32.88 -31.96 -31.66 -30.97 -30.27 -29.97 -29.41 -28.83 -28.18 -27.42 -26.75 -26.07 -25.45 -25.11
80.76 69.46 55.53 35.73 24.64 18.33 22.20 13.95 9.68 5.89 1.59 -4.64 -11.50 -20.45 -30.92 -44.10 -62.65
-0.25 -0.38 -1.13 -2.85 -3.92 -4.42 -4.57 -4.73 -4.46 -4.15 -3.85 -3.63 -3.42 -3.20 -2.86 -2.39 -1.91
-1.0
-5.41 -14.13 -26.14 -41.81 -51.12 -58.97 -65.06 -70.40 -74.09 -77.84 -81.69 -85.86 -90.97 -97.68 -106.74 -119.23 -134.59
Device S-parameters are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 10 May 2007 ver 1
-4 .0 -5. 0
-3 .0
-5.
-4 .0
0
0
2 -0.
2 -0.
-10.0
0.2
5.0
0. 4
-10.0
0 3.
0 4.
5.0
-3 .0
0.2
10.0
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
Application Circuit PC Board Layout
Baseplate Configuration
Circuit Board Material: 0.0147" Rogers Ultralam 2000, single layer, 1 oz copper, r = 2.45, Microstrip line details: width = .042", spacing = .050"
Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing is recommended.
Evaluation Board Bias Procedure
Following bias procedure is recommended to ensure proper functionality of AP601 in a laboratory environment. The sequencing is not required in the final system application.
Bias. Vcc Vbias Vpd Voltage (V) +28 +5 +5
Turn-on Sequence:
1. 2. 3. 4. 5. 1. 2. 3. 4. Notes: 1. 2. 3. Attach input and output loads onto the evaluation board. Turn on power supply Vcc = +28V. Turn on power supply Vbias = +5V. At this point, the only current drawn by the device is leakage current (< 25A). Turn on power supply Vpd = +5V. Power supply Vcc should now be drawing typical Icq = 40 mA. Turn on RF power. Turn off RF power. Turn off power supply Vpd = +5V. Turn off power supply Vbias = +5V. Turn off power supply Vcc = +28V. Icq can be adjusted with the resistor R2 from the Vpd (+5V) supply and the PIN_VPD (pin14) of the amplifier. Increasing R2 results in a lower Icq. Icq should not be increased above 80mA. Vpd is used as a reference for the internal active bias circuitry. It can be used to turn on/off the amplifier. Ipd depends on the Icq quiescent current setting. Ipd can be up to 2mA at a quiescent current setting of 40mA. Vbias should be maintained fixed at +5V. Ibias will change based on RF input power level. It can be up to 2mA on the AP601.
Turn-off Sequence:
Ipd vs Icq
2
Ibias (mA)
Ibias vs Output Power
2 1.5 1 0.5 0
Ipd (mA)
1.5 1 0.5 0 0 20 40 60 80 100 Icq Setting (mA)
18
20
22
24
26
28
Output Average Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 3 of 10 May 2007 ver 1
AP601
Frequency (MHz) W-CDMA Ch. Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +24 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
High Dynamic Range 1.8W 28V HBT Amplifier
869-960 Application Circuit (AP601-PCB900)
Typical WCDMA Performance at 25 C at a channel power of +24 dBm
880 940 Units +24 +24 dBm 16.5 15.8 dB 8.9 14 dB 15 7.5 dB -50 -50 dBc -51 -51 dBc 54 52 mA 16.6 17 % +32.5 +32.5 dBm 40 mA +5 V +28 V
VPD GND VBIAS VCC
C7 1000pF
3.3pF See note 3
5.1 Ohm C24 1.8pF See note 4
15nH See note 6 C26 0.5pF See note 5
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of C1 is at 0.710" (29.1 @ 940 MHz) from the center of C24. 4. The center of C24 is placed at 0.285" (11.7@ 940 MHz) from the edge of the AP601 (U1). 5. The center of C26 is placed at 0.055" (2.3 @ 940 MHz) from the edge of the AP601 (U1). 6. The center of L4 is at 0.095" (3.9 @ 940 MHz) from the center of C26. 7. The bold-faced RF trace is for the DC bias feed. The stub's length is approximately a 1/4 . 8. The main RF trace is cut at components L3 and L4 for this particular reference design.
869-960 MHz Application Circuit Performance Plots
Gain vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 C
S11, S22 vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 C
18 17
S11, S22 (dB)
0
60
Collector Efficiency (%)
920 MHz 940 MHz 960 MHz
-5 -10 -15 -20
50 40 30 20 10 0
Gain (dB)
16 15 14 13 0.8 0.84 0.88 0.92 0.96 1 Frequency (GHz)
ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 40 mA, 25 C
S11
-25 0.8 0.85 0.9 0.95 1 1.05
S22
1.1
17
21
25
29
33
Frequency (GHz)
Output Power (dBm)
ACPR vs. Output Power vs. Frequency
IS-95A, 9 Ch. Fwd, 940 MHz, Vcc = 28V, Icq = 40 mA, 25 C
IMD vs. Output Power
CW 2-tone signal, 940 MHz, f = 1 MHz, 28V, 40 mA Icq, 25 C
-40
869 MHz 880 MHz 920 MHz 940 MHz
-40
IMD3L IMD3U
-40
ACLR1 (dBc)
-45
IMD (dBc)
-50
ACPR (dBc)
894 MHz
960 MHz
IMD5
-50
-50
-60
-60
-55
WCDMA 3GPP Test Model 1+64DPCH, 60% clipping, PAR = 8.6 dB @ 0.01%
-60 16 18 20 22 24 26
-70 20 22 24 26 28 30 Output Power, PEP (dBm)
-70 17 19 21 23 25 27
Average Output Power (dBm)
Average Output Power (dBm)
Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 10 May 2007 ver 1
AP601
Frequency W-CDMA Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +24 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
High Dynamic Range 1.8W 28V HBT Amplifier
1930-1990 MHz Application Circuit (AP601-PCB1960)
Typical WCDMA Performance at 25 C at a channel power of +24 dBm
1960 MHz +24 dBm 15 dB 11 dB 10 dB -49 dBc -62 dBc 52 mA 17 % +32.7 dBm 40 mA +5 V +28 V
VPD GND VBIAS VCC
C7 1000pF W = .030" L = .980"
C27 0.1F
4.7 nH See note 3
C5 2.2pF See note 4
C19 2.4pF See note 5
C28 0.8pF See note 6
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of L3 is placed at 0.035" (3.0 @ 1960 MHz) from the center of C5. 4. The center of C5 is placed at 0.085" (7.3 @ 1960 MHz) from the edge of the AP601 (U1). 5. The center of C19 is placed at 0.755" (64.5 @ 1960 MHz) from the edge of the AP601 (U1). 6. The center of C18 is placed at 0.300" (25.6 @ 1960 MHz) from the center of C19. 7. The bold-faced RF trace is for the DC bias feed. The stub's length is approximately a 1/4 . 8. The main RF trace is cut at component location L3 for this particular reference design.
1930-1990 MHz Application Circuit Performance Plots
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 C
S11, S22 vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 C
16 15 14 13 12 11 23
1930 MHz 1960 MHz 1990 MHz
0
50
Collector Efficiency (%)
1930 MHz 1960 MHz 1990 MHz
-5
40 30 20 10 0
S11, S22 (dB)
Gain (dB)
-10 -15 -20 -25
S11 S22
25
27
29
31
33
1.8
1.85
1.9
1.95
2
2.05
2.1
18
22
26
30
34
Output Power (dBm)
ACLR1 vs. Output Power vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 C
Frequency (GHz)
Output Power (dBm)
ACPR vs. Output Power vs. Frequency
IS-95A, 9 Ch. Fwd, 1960 MHz, Vcc = 28V, Icq = 40 mA, 25 C
IMD vs. Output Power
CW 2-tone signal, 940 MHz, f = 1 MHz, 28V, 40 mA Icq, 25 C
-40
1930 MHz
-40 -50
IMD (dBc)
-40
IMD3L IMD3U
-45
1960 MHz 1990 MHz
ACLR1 (dBc)
-50 -55 -60 -65 16 18 20 22 24 26
WCDMA 3GPP TM 1+64DPCH, 60% clipping, PAR = 8.6 dB
-60 -70 -80 22 24 26 28 30 32 Output Power, PEP (dBm)
ACPR (dBc)
IMD5
-50
-60
-70
-80 17 19 21 23 25 27
Average Output Power (dBm)
Average Output Power (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 10 May 2007 ver 1
AP601
Frequency W-CDMA Channel Power Power Gain Input Return Loss Output Return Loss ACLR IMD3 @ +24 dBm PEP Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
High Dynamic Range 1.8W 28V HBT Amplifier
2110-2170 MHz Application Circuit (AP601-PCB2140)
Typical WCDMA Performance at 25 C at a channel power of +24 dBm
2140 MHz +24 dBm 13.5 dB 12 dB 8 dB -51 dBc -55 dBc 52 mA 17 % +32.5 dBm 40 mA +5 V +28 V
VPD GND VBIAS VCC
C7 1000pF
3,3pF C22 See note 4 1.2pF See note 3
C5 2.4pF See note 5
C19 1.8pF See note 6
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of C22 is placed at 0.090" (8.4 @ 2140 MHz) from the center of C1. 4. The center of C1 is placed at 0.910" (84.9 @ 2140 MHz) from the center of C5. 5. The center of C5 is placed at 0.100" (9.3 @ 2140 MHz) from the edge of the AP601 (U1). 6. The center of C19 is placed at 0.760" (70.9 @ 2140 MHz) from the edge of the AP601 (U1). 7. The bold-faced RF trace is for the DC bias feed. The stub's length is approximately a 1/4 .
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 C
S11, S22 vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 C
14 13
0
50
Collector Efficiency (%)
2110 MHz 2140 MHz 2170 MHz
-5
40 30 20 10 0
12 11
2110 MHz
S11, S22 (dB)
Gain (dB)
-10 -15 -20 -25
10 9 22
2140 MHz 2170 MHz
S11 S22
24
26
28
30
32
2
2.05
2.1
2.15
2.2
2.25
2.3
12
16
20
24
28
32
Output Power (dBm) ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 40 mA, 25 C
Frequency (GHz)
Output Power (dBm) ACLR1 vs. Output Power vs. Vcc
WCDMA, Icq = 40 mA, 2140 MHz, 25 C
Icc vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 40 mA, 25 C
-35
65
-35
2110 MHz 2140 MHz
Collector Current (mA)
2110 MHz
26 V 28 V 30 V
-40
2140 MHz 2170 MHz
60 55 50 45 40
-40
ACLR1 (dBc)
2170 MHz
-45 -50 -55 -60 16 18 20 22 24 26
ACLR1 (dBc)
-45 -50 -55 -60
32 V
16
18
20
22
24
26
16
18
20
22
24
26
Average Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 6 of 10 May 2007 ver 1
AP601
15
High Dynamic Range 1.8W 28V HBT Amplifier
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 40 mA, 2140 MHz
Icc vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 40 mA, 2140 MHz
Efficiency vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 40 mA, 2140 MHz
150 125 100 75 50 25 0 14 18 22 26 30 34 14 18 22 26 30 34
50
14
Collector Efficiency (%)
Collector Current (mA)
-40 C 25 C 85 C
-40 C
40 30 20 10 0 14
25 C 85 C
Gain (dB)
13 12
-40 C
11 10
25 C 85 C
18
22
26
30
34
Output Power (dBm) ACLR1 vs. Output Power vs. Temperature
WCDMA, Vcc = 28V, Icq = 40 mA, 2140 MHz
Output Power (dBm) Icc vs. Output Power vs. Temperature
WCDMA, Vcc = 28V, Icq = 40 mA, 2140 MHz
Output Power (dBm) Efficiency vs. Output Power vs. Temperature
WCDMA, Vcc = 28V, Icq = 40 mA, 2140 MHz
-35
70
25
Collector Efficiency (%)
Collector Current (mA)
-40 C
-40 C
-40 C
-40
25 C 85 C
ACLR1 (dBc)
60
25 C 85 C
20 15 10 5 0
25 C 85 C
-45 -50 -55 -60 16 18 20 22 24 26
50
40
30 16 18 20 22 24 26
16
18
20
22
24
26
Average Output Power (dBm) Gain vs. Frequency vs. Temperature
WCDMA, Vcc = 28V, Icq = 40 mA, +24 dBm Pout
Average Output Power (dBm)
ACLR1 vs. Output Power vs. Vcc
WCDMA, Icq = 40 mA, 2140 MHz, 25 C
Average Output Power (dBm)
Efficiency vs. Output Power vs. Vcc
WCDMA, Icq = 40 mA, 2140 MHz, 25 C
15 14
-35 -40
30
Collector Efficiency (%)
26 V 28 V 30 V
26 V
25 20 15 10 5 0
28 V 30 V 32 V
13 12
-40 C
ACLR1 (dBc)
Gain (dB)
-45 -50 -55 -60
32 V
11 10 2110
25 C 85 C
2130
2150
2170
16
18
20
22
24
26
16
18
20
22
24
26
Frequency (MHz)
Gain vs. Output Power vs. Vcc
CW tone, Icq = 40 mA, 2140 MHz, 25 C
Average Output Power (dBm) Efficiency vs. Output Power vs. Vcc
CW tone, Icq = 40 mA, 2140 MHz, 25 C
Average Output Power (dBm) IMD vs. Output Power
CW 2-tone signal, 2140 MHz, f = 1 MHz, 28V, 40 mA Icq, 25 C
14
60
Collector Efficiency (%)
26 V
-40 -50
IMD (dBc)
IMD3L IMD3U IMD5
13
50 40 30 20 10 0
28 V 30 V 32 V
Gain (dB)
12 11 10 9 12
-60 -70 -80
26 V 28 V 30 V 32 V
16
20
24
28
32
12
16
20
24
28
32
22
24
26
28
30
32
Output Power (dBm)
Output Power (dBm)
Output Power, PEP (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 7 of 10 May 2007 ver 1
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
2110-2170 MHz Application Note: Changing Icq Biasing Configurations
The AP601 can be configured to operate with lower bias current by varying the bias-adjust resistor - R2. The recommended circuit configurations shown previously in this datasheet have the device operating with a 40 mA as the quiescent current (ICQ). This biasing level represents the best tradeoff in terms of linearity and efficiency. Lowering ICQ will improve upon the efficiency of the device, but degraded linearity. Increasing ICQ has nominal improvement upon the linearity, but will degrade the device's efficiency. Measured data shown in the plots below represents the AP601 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. Icq (mA) 10 20 30 40 50 60 70 80 R2 () 12k 5.44k 3.48k 2.61k 2.06k 1.67k 1.42k 1.22k VPD (V) 5 5 5 5 5 5 5 5 PIN_VPD (V) 2.50 2.58 2.63 2.68 2.72 2.77 2.81 2.85
GND
C7 1000pF
VPD
Thermal Rise vs. Output Power vs. Icq
Vcc = 28V
80
10 mA
Thermal Rise (C)
60 40 20 0 14
20 mA 30 mA 40 mA 50 mA 60 mA 70 mA 80 mA
3,3pF C22 1.2pF C5 2.4pF C19 1.8pF
16
18
20
22
24
26
Output Power (dBm)
ACLR1 vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 C
Efficiency vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 C
Efficiency vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 C
-30
120
30
Collector Efficiency (%)
Collector Current (mA)
10 mA 50 mA
20 mA 60 mA
30 mA 70 mA
40 mA 80 mA
10 mA
20 mA 60 mA
30 mA 70 mA
40 mA 80 mA
10 mA 30 mA 50 mA 70 mA
VBIAS
20 mA 40 mA 60 mA 80 mA
100 80 60 40 20 0
50 mA
25 20 15 10 5 0
ACLR1 (dBc)
-40
-50
-60 18 20 22 24 26
18
20
22
24
26
18
20
VCC
22
24
26
Average Output Power (dBm) Gain vs. Output Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 C
Average Output Power (dBm) Output Power vs. Input Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 C
Average Output Power (dBm) Efficiency vs. Output Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 C
15
34
60
Collector Efficiency (%)
10 mA
20 mA 40 mA 60 mA 80 mA
Output Power (dBm)
14
50 40 30 20 10 0
30
30 mA 50 mA 70 mA
Gain (dB)
13 12 11 10 18 22 26 30 34
10 mA 50 mA 20 mA 60 mA 30 mA 70 mA 40 mA 80 mA
26
10 mA 30 mA
20 mA 40 mA 60 mA 80 mA
22
50 mA 70 mA
18 4 8 12 16 20
18
22
26
30
34
Output Power (dBm)
Input Power (dBm)
Output Power (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 8 of 10 May 2007 ver 1
AP601
Frequency W-CDMA Channel Power Power Gain ACLR Operating Current, Icc Collector Efficiency Output P1dB Quiescent Current, Icq Vpd, Vbias Vcc
High Dynamic Range 1.8W 28V HBT Amplifier
2320-2380 MHz WiBro Application Circuit
Typical WCDMA Performance at 25 C at a channel power of +23 dBm
2350 MHz +23 dBm 14 dB -50 dBc 50 mA 14 % +32.5 dBm 40 mA +5 V +28 V
22pF C3 1.6pF See note 3
VPD
GND
VBIAS
VCC
C34 C7 1000pF W = .030" L = .590" C33
C32 22pF
C19 0.6pF See note 4
C30 0.2pF See note 5
C31 1.1pF See note 6
22pF
C32 C33 C34
C31 C30
C19
Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of C3 is placed at 0.050" (5.1 @ 2.35 GHz) from the edge of the AP601 (U1). 4. The center of C19 is placed at 0.650" (66.6 @ 2.35 GHz) from the edge of the AP601 (U1). 5. The center of C30 is placed at 0.110" (11.3 @ 2.35 GHz) from the center of C19. 6. The center of C31 is placed at 0.040" (4.1 @ 2.35 GHz) from the center of C19. 7. The bold-faced RF trace is for the DC bias feed. The stub's length is approximately a 1/4 .
2320-2380 MHz Application Circuit Performance Plots
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 C
15
60
Collector Efficiency (%)
2320 MHz 2350 MHz 2380 MHz
14
50 40 30 20 10 0
Gain (dB)
13 12
2320 MHz
11 10 22
2350 MHz 2380 MHz
24
26
28
30
32
34
22
24
26
28
30
32
34
Output Power (dBm) ACLR1 vs. Output Power vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 C
Output Power (dBm)
EVM vs. Output Power
Vcc = 28V, Icq = 40 mA, 25 C, 2350 MHz
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 40 mA, 25 C
2320 MHz
2.5
Collector Efficiency (%)
-40
2350 MHz
3.0
25
2320 MHz
20 15 10 5 0
2350 MHz 2380 MHz
ACLR1 (dBc)
-45
EVM (%)
2380 MHz
2.0 1.5 1.0 0.5 0.0
WCDMA 3GPP TM 1+64DPCH, 60% clipping, PAR = 8.6 dB
-50
-55
WCDMA 3GPP TM 1+64DPCH, 60% clipping, PAR = 8.6 dB
WCDMA 3GPP TM 1+64DPCH, 60% clipping, PAR = 8.6 dB
-60 20 21 22 23 24 25
20
21
22
23
24
25
20
21
22
23
24
25
Average Output Power (dBm)
Output Power (dBm)
Average Output Power (dBm)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 9 of 10 May 2007 ver 1
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
AP601-F Mechanical Information
This package is lead-free and RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Drawing
Outline Drawing
Product Marking
The component will be laser marked with a "AP601-F" product label with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the "Application Notes" section.
Functional Pin Layout
Mounting Configuration / Land Pattern
Pin 1 2, 3, 7, 8, 12, 13 4, 5, 6 9, 10, 11 14 Backside paddle Function PIN_VBIAS N/C RF IN RF Output / Vcc PIN_VPD GND
MSL / ESD Rating
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard:
Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101
Thermal Specifications
MTTF (hours)
MTTF vs. Junction Temperature
1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 120
Parameter
Thermal Resistance, JC
Referenced from peak junction to the center of the bottomside ground paddle For 106 hours MTTF
Rating
33.3 C / W 192 C
MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Junction Temperature, TJ
Max Junction Temperature, TJ,max 250 C For catastrophic failure
140
160
180
200
Junction Temperature (C)
Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 10 of 10 May 2007 ver 1

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